fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 1 march 2013 fdb28n30 n-channel unifet tm mosfet ? 300 v, 28 a, 129 m ? features ?r ds(on) = 108 m ? (typ.) @ v gs = 10 v, i d = 14 a ? low gate charge (typ. 39 nc) ? low c rss (typ. 35 pf) ? 100% avalanche tested ? rohs compliant applications ? uninterruptible power supply ? ac-dc power supply description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device fam ily is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. d g s g s d d 2 -pak mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdb28n30 unit v dss drain to source voltage 300 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t - continuous (t c = 25 o c) 28 a - continuous (t c = 100 o c) 19 i dm d r a i n c u r r e n t - p u l s e d (note 1) 112 a e as single pulsed avalanche energy (note 2) 588 mj i ar avalanche current (note 1) 28 a e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 250 w - derate above 25 o c2.0w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdb28n30 unit r ? jc thermal resistance, junction to case, max. 0.5 o c/w r ? ja * thermal resistance, junction to ambient* 40 r ? ja thermal resistance, junction to ambient, max. 62.5 *when mounted on the minimum pad size recommended (pcb mount)
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdb28n30 FDB28N30TM d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v, t j = 25 o c 300 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c-0.4-v/ o c i dss zero gate voltage drain current v ds = 300v, v gs = 0v - - 1 ? a v ds = 240v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 14a - 0.108 0.129 ? g fs forward transconductance v ds = 40v, i d = 14a - 24.8 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1690 2250 pf c oss output capacitance - 305 405 pf c rss reverse transfer capacitance - 35 50 pf q g total gate charge at 10v v ds = 240v, i d = 28a v gs = 10v (note 4) -3950nc q gs gate to source gate charge - 12 - nc q gd gate to drain ?miller? charge - 17 - nc t d(on) turn-on delay time v dd = 150v, i d = 28a r g = 25 ? (note 4) -3580ns t r turn-on rise time - 135 280 ns t d(off) turn-off delay time - 79 168 ns t f turn-off fall time - 69 148 ns i s maximum continuous drain to source diode forward current - - 28 a i sm maximum pulsed drain to source diode forward current - - 112 a v sd drain to source diode forward voltage v gs = 0v, i sd = 28a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 28a di f /dt = 100a/ ? s - 279 - ns q rr reverse recovery charge - 2.7 - ?? c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 1.5mh, i as = 28a, v dd = 50v, r g = 25 ? , starting t j = 25 ? c 3. i sd ? 28a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ? c 4. essentially independent of operating temperature typical characteristics
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 110 1 10 100 0.4 * notes : 1. 250 ? s pulse test 2. t c = 25 o c v gs = 10.0 v 8.0 v 7.0 v 6.5 v 6 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.5 246810 0.1 1 10 100 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 ? s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0255075 0.10 0.15 0.20 0.25 0.30 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 1 10 100 notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 200 10 -1 10 0 10 1 0 1500 3000 4500 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 8 16 24 32 40 0 2 4 6 8 10 *note: i d = 28a v ds = 60v v ds = 150v v ds = 240v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] ? s 100 ? s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 500 dc 25 50 75 100 125 150 0 5 10 15 20 25 30 i d , drain current [a] t c , case temperature [ o c ] ? jc (t) = 0.5 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse thermal response [ z ? jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 7 mechanical dimensions d 2 pak dimensions in millimeters
fdb28n30 n-channel unifet tm mosfet ?2007 fairchild semiconductor corporation fdb28n30 rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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